What is magnetoresistance formula?

What is magnetoresistance formula?

Magnetoresistance is defined as:[2.2]MR(T)=ρ(H,T)−ρ(0,T)ρ(0,T)where ρ(H, T) and ρ(0, T) are the resistivity at a given temperature T in the presence and absence of magnetic field H, respectively.

What causes magnetoresistance?

The force on a current-carrying wire in a perpendicular magnetic field is due to the force on the charge carriers moving through the wire. 12. This force on the charge carriers produces an increased resistance as the charge carriers collide more with atoms in the wire. This phenomenon is called magnetoresistance.

What is magnetoresistance of semiconducting sample?

In a semiconductor with a single carrier type, the magnetoresistance is proportional to (1 + (μB)2), where μ is the semiconductor mobility (units m2·V−1·s−1 or T −1) and B is the magnetic field (units teslas).

Can all materials have magnetoresistance?

Magnetoresistance, where the resistance of the material changes with applied magnetic field, occurs in all metals.

Can a ferromagnet ever have negative magnetoresistance?

In the ferromagnetic metals a negative character of the magnetoresistance due to the electron-spin scattering arises from the following origin: The magne- tic field increases the effective field acting on the localized spins and suppresses the fluctuation of spins in space and time, which leads to the decrease of the …

What is Magneto Resistance effect?

Magnetoresistance is the tendency of a material (often ferromagnetic) to change the value of its electrical resistance in an externally-applied magnetic field. There are a variety of effects that can be called magnetoresistance.

What is the use of magnetoresistance?

The main application of GMR is in magnetic field sensors, which are used to read data in hard disk drives, biosensors, microelectromechanical systems (MEMS) and other devices. GMR multilayer structures are also used in magnetoresistive random-access memory (MRAM) as cells that store one bit of information.

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