What is collector emitter breakdown?

What is collector emitter breakdown?

What It Is: Collector-emitter breakdown voltage is the VC at which a specified IC flows, with the base open. Since it’s the reverse current across a junction, IC exhibits a knee shaped rise, increasing rapidly once breakdown occurs. On the curve tracer, VC is applied by the Collector Supply.

What is the junction between emitter and base?

As shown in the above figure, the emitter to base junction is forward biased and the collector to base junction is reverse biased. Forward bias on the emitter to base junction causes the electrons to flow from N type emitter towards the bias. This condition formulates the emitter current (IE).

Does the collector or the emitter go to ground?

Typically, NPN should have the load on Collector side which is controlled by positive current flowing to the base which then switches the Emitter to ground allowing current to flow from Collector to Emitter is called sourcing the load.

What is emitter base breakdown voltage?

What It Is: Emitter-base breakdown voltage is the VB at which a specified IB flows, with the collector open. Since it’s the reverse current across a junction, IB exhibits a knee shaped rise, increasing rapidly once breakdown occurs. On the curve tracer, VB is applied by the Collector Supply.

What is transistor breakdown?

The Breakdown Region of a transistor is the region where the collector voltage, Vcc, is so large that the collector-base diode breaks down, causing a large, undesired collector current to flow.

Why is it called bipolar junction transistor?

device is often called the bipolar junction transistor because its operation requires that the negatively charged electrons and their positively charged counterparts (the holes corresponding to an absence of electrons in the crystal lattice) coexist briefly in the presence of one another.

What are the two pn junctions of a transistor?

In a transistor, the middle layer (here n-region) is called the base, the forward biased p-n junction is called the emitter junction and the reverse biased p-n junction is called collector junction.

Why is emitter grounded?

In a grounded-emitter transistor, when emitter current becomes zero in cut-of region the emitter potential is called. In common emitter configuration, the emitter terminal is grounded so the common emitter configuration is also known as grounded emitter configuration.

Does emitter need ground?

It does, but it does it internally. Externally it needs to be connected to provide a path for the transistor current. For some circuits that path goes directly to ground. You need to read and understand how the transistor works, to understand how the circuits using them work.

How is VBE calculated?

The “real” VBE value – for a given collector current Ic – can be calculated only – based on Shockleys equation Ic=Is*[exp(Vbe/Vt)-1] – if you know the value of the saturation current Is. However, this current has very large tolerances and a rather large dependency on temperature.

How do you calculate breakdown voltage of a transistor?

Measuring breakdown voltage is done by applying an increasing reverse voltage to the device until a certain test current is reached that indicates that the device is in breakdown.

What is emitter − base breakdown voltage?

What are two types of breakdown in transistor?

The Avalanche Breakdown and Zener Breakdown are two different mechanisms by which a PN junction breaks.

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